Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology

Abstract

This paper presents a study of the ionizing radiation tolerance of 0.13 /spl mu/m CMOS transistors, in view of the application to the design of rad-hard analog integrated circuits. Static, signal and noise parameters of the devices were monitored before and after irradiation with /sup 60/Co /spl gamma/-rays at a 10 Mrad total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.