Publication | Closed Access
50.2: High Reliable In‐Ga‐Zn‐Oxide FET Based Electronic Global Shutter Sensors for In‐Cell Optical Touch Screens and Image Sensors
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Citations
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References
2011
Year
Electrical EngineeringElectronic DevicesOptical MaterialsGlobal ShutterDisplay TechnologyEngineeringOxide ElectronicsImage SensorsApplied PhysicsOs FetsOptoelectronic DevicesTouch ScreenTechnologyMicroelectronicsOptoelectronicsOptical SensorsImage Sensor
Abstract A 6 inch XGA LCD touch screen with optical sensors in its pixels, using oxide semiconductor (OS) FETs has been developed. The extremely low off‐state current of the OS FET facilitates the use of a global shutter and leads to an improved accuracy of touch detection. The possibility of a novel application of a touch screen and an image sensor that is an application of the combination of OS FETs and global shutter is proposed.
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