Titanium nitride as spreading layers for AlGaInP visible LEDs

Abstract

Thin titanium nitride (TiN) films with low sheet resistance and high transparency were deposited on AlGaInP light-emitting diodes (LEDs) to improve light extraction from the LED surface. Comparison test devices were fabricated both with and without TiN spreading layers. Results show LED current crowding at high current is reduced for devices with TiN current spreading film, improving external efficiency. It is confirmed that TiN films are feasible as current spreading layers of AlGaInP LEDs.