Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBE - Concepedia

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Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBE

19

Citations

11

References

1987

Year

Tze-Jung Yao, Yasumasa Okada, Hajime Kawanami, Shogo Matsui, A. Imagawa, Kenji Ishida

MRS Proceedings

Electrical EngineeringEpitaxial GrowthEngineeringApplied PhysicsResidual StressGaas Layer GrownSemiconductor Device FabricationMolecular Beam EpitaxyMicroelectronicsCompound Semiconductor

References

	Year	Citations

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