A Klein-tunneling transistor with ballistic graphene

Abstract

Today the availability of high mobility graphene up to room temperature makes\nballistic transport in nanodevices achievable. In particular, p-n-p transistor\nin the ballistic regime gives access to the Klein tunneling physics and allows\nthe realization of devices exploiting the optics-like behavior of Dirac\nFermions (DF) as in the Vesalego lens or the Fabry P\\'erot cavity. Here we\npropose a Klein tunneling transistor based on geometrical optics of DF. We\nconsider the case of a prismatic active region delimited by a triangular gate,\nwhere total internal reflection may occur, which leads to the tunable\nsuppression of the transistor transmission. We calculate the transmission and\nthe current by means of scattering theory and the finite bias properties using\nNon Equilibrium Green's Function(NEGF) simulation.\n