Some issues of power MOSFETs

Concepedia

Publication | Closed Access

DOI

Citations

References

1982

Year

Min-Hwa Chi, Chenming Hu

Unknown Venue

Device ModelingLinear Source GeometryElectrical EngineeringEngineeringPower IcHigh Voltage EngineeringPower DeviceBias Temperature InstabilityParasitic Bipolar TransistorPower Semiconductor DevicePower Electronic SystemsPower ElectronicsPower MosfetsMicroelectronicsPower Electronic Devices

Abstract

Several recent studies of power MOSFETs are discussed in this paper: (a) The second-breakdown of power MOSFETs is shown to be triggered by the turn-on of the parasitic bipolar transistor, (b) The I-V characteristics of power MOSFETs operating in reverse mode (such as when used as a synchronous rectifier) are studied, (c) A H5°-spreadingangle model for the calculation of epi-resistance is shown to be more accurate than any previously published model for linear source geometry. More importantly, this model has been extended to cellular source geometries.