Theory of short-pulse gain saturation in semiconductor laser amplifiers

Abstract

Carrier heating and spectral hole burning are shown to have a strong influence on the amplification of ultrashort pulses using semiconductor laser amplifiers. Approximate analytical expressions for the effective saturation energy in different pulsewidth regimes are derived.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>