A Semiconductor‐Nanowire Assembly of Ultrahigh Junction Density by the Langmuir–Blodgett Technique

Abstract

The assembly of ultrathin ZnSe nanowires over large areas (see Figure) is achieved by a Langmuir–Blodgett technique in a single step with uniform registry, and without any further secondary technique for alignment. Ultrahigh packing density of junctions, exceeding over 60 × 103 μm–2, is achieved by subsequent deposition of a second two-dimensional nanowire assembly with a controlled angle between the two layers. The resulting network notably surpasses the limit of conventional fabrication techniques.