TRASIM: compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices

Abstract

A new software tool TRASIM (Two-Dimensional Transient Simulator) has been developed for arbitrary, planar semiconductor devices. A finite difference technique is employed with a modified, decoupled Gummel-like method. The memory requirements are reduced significantly compared to the conventionally used Newton-like methods. TRASIM exhibits a good stability and convergence rate, and user interaction with the computational process is significantly reduced. Low memory requirements and efficiency make the method attractive for the future 3-D applications. The software uses the drift-diffusion model, with up-to-date mobility and lifetime models. External RC-chains may be connected to device electrodes. Numerical examples are presented illustrating the advantages of the modified Gummel method over the Newton method, for transient simulation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>