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Technological possibilities of Si:H thin film deposition with embedded cubic Mg<sub>2</sub>Si nanoparticles
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2013
Year
Optical MaterialsEngineeringOptical AbsorptionThin Film Process TechnologyVacuum DeviceChemical DepositionReactive Laser AblationPulsed Laser DepositionEpitaxial GrowthThin Film ProcessingAbsorption CoefficientThin-film TechnologyMaterials ScienceNanotechnologyNanomanufacturingTechnological PossibilitiesNanomaterialsSurface ScienceApplied PhysicsThin FilmsChemical Vapor Deposition
Abstract In this paper we introduce three technological ways how to increase an absorption coefficient of hydrogenated silicon/Si:H/ thin films and diode structures on the base of Si:H. The first one is reactive deposition epitaxy (RDE), which permit to form silicide nanoparticles of different elements /Fe, Cr, Ca, Mg/ with semiconducting properties and convenient band gap. Two more simple techniques have been also tested for the creation of magnesium silicide nanoparticles (Mg 2 Si‐NPs): a reactive laser ablation (RLA) and the combination of Mg vacuum evaporation and Plasma‐Enhanced Chemical Vapour Deposition (PECVD). The formation of Mg 2 Si‐NPs, its structures and the changes of optical absorption for samples grown by three methods have been proved by the Raman and optical spectroscopies. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)