Silicon direct bonding technologyemploying a regularly grooved surface

Abstract

An intimate contact between two silicon wafers with mirror-polished smooth surfaces, one grooved and another smooth, was perfomed by direct bonding technology. High structural quality was realised not only at the bonded interface but in the bulk. It was demonstrated that the artificial grooves were filled commensurate with dislocation gettering. The filling would be explained with mass-transport phenomena assisted by dislocation movement from initial contact boundaries toward groove surfaces. The suggested method also yielded an intimate bonding not only between {111} wafers strongly misorientod and slightly inclined to {111} basal planes but even between {111} and {100} orientation wafers.