Publication | Closed Access
69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs
67
Citations
10
References
2010
Year
Materials EngineeringElectrical EngineeringElectronic DevicesEngineeringElectronic MaterialsDisplay TechnologyOrganic ElectronicsThin Film TransistorApplied PhysicsTft BackplanesOrganic SemiconductorBottom Gate TftOptoelectronic DevicesThin FilmsMicroelectronicsAdvanced Display Technology
Abstract Amorphous oxide thin film transistor (TFT) arrays have been developed as TFT backplanes for large size active‐matrix organic light emitting diode (AMOLED) displays. An amorphous IGZO (Indium Gallium Zinc Oxide) bottom gate TFT with an etch‐stop layer (ESL) delivered excellent electrical performance with field‐ effect mobility of 21 cm 2 /V‐s, an on/off ratio of >10 8 , and subthreshold slope (SS) of 0.29V/dec. A full color 19‐inch AMOLED display has been developed using the amorphous IGZO TFT backplane.
| Year | Citations | |
|---|---|---|
Page 1
Page 1