Near‐Infrared Light‐Emitting Ambipolar Organic Field‐Effect Transistors

Abstract

Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine derivative as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with experimental results, strong metal-induced electroluminescence quenching is observed when light emission takes place in close proximity to the source–drain electrodes (see figure).