70.2L: <i>Late‐News Paper</i> : 14.7” Active Matrix PHOLED Displays on Temporary Bonded PEN Substrates with Low Temperature IGZO TFTs

Abstract

Abstract A flexible, 14.7 inch diagonal organic light emitting diode display has been successfully demonstrated. Device fabrication of the thin film transistor backplane occurred below 200 °C on a polyethylene naphthalate substrate using indium gallium zinc oxide with a saturation mobility of 13.5 cm 2 /V‐s as the active semiconductor.