Realization of high-Q inductors using wirebonding technology

Abstract

Two types of novel high-Q vertical on-chip inductors using wirebonding technology are proposed for low cost and high performance Si-RFIC's. The new inductors show significant improvements of the quality factor and the self-resonant frequency. Their measured maximum quality factors are about 3-times higher than those of the planar spiral inductors (7 for 3.4 nH, 6 for 5 nH) at most. From these experimental results, the bondwire inductors are expected to greatly improve the performance and the production cost of Si-RFIC's.