Publication | Closed Access
MOCVD growth of highly strained InGaAs:Sb–GaAs–GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission
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Citations
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References
2004
Year
Semiconductor TechnologyPhotonicsElectrical EngineeringμM EmissionEngineeringMocvd GrowthApplied PhysicsSurface-emitting LasersMolecular Beam EpitaxyOptoelectronicsCompound Semiconductor
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