A simple three-terminal IC bandgap reference

TLDR

The paper proposes a new configuration for realizing a stabilized bandgap voltage. The authors present a two‑transistor bandgap cell that uses collector‑current sensing to cancel base‑current errors, operates at a high‑impedance node for easy integration into higher‑voltage circuits, and is incorporated into a 2.5‑V three‑terminal monolithic reference with detailed functional and analytical design. Analytical and experimental results show the reference achieves a 5 ppm/°C temperature coefficient across the military range, with quantified sensitivity, gain, and frequency‑response characteristics.

Abstract

A new configuration for realization of a stabilized bandgap voltage is described. The new two-transistor circuit uses collector current sensing to eliminate errors due to base current. Because the stabilized voltage appears at a high impedance point, the application to circuits with higher output voltage is simplified. Incorporation of the new two-transistor cell in a three-terminal 2.5-V monolithic reference is described. The complete circuit is outlined in functional detail together with analytical methods used in the design. The analytical results include sensitivity coefficients, gain and frequency response parameters, and biasing for optimum temperature performance. The performance of the monolithic circuit, which includes temperature coefficients of 5 ppm//spl deg/C over the military temperature range, is reported.