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2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods

Device ModelingSemiconductorsElectrical EngineeringBoundary ConditionsEngineeringSemiconductor TechnologyPhysicsWeno-boltzmann SchemesNanoelectronicsNatural SciencesApplied PhysicsNumerical SimulationCondensed Matter PhysicsNanoscale ModelingSemiconductor Device SimulationsMicroelectronicsSemiconductor DeviceMultiscale Modeling