Fabrication and electric-field-dependent transport measurements of mesoscopic graphite devices

Abstract

We have developed a unique micromechanical method to extract extremely thin graphite samples. Graphite crystallites with thicknesses ranging from 10 to 100nm and lateral size ∼2μm are extracted from bulk. Mesoscopic graphite devices are fabricated from these samples for electric field-dependent conductance measurements. Strong conductance modulation as a function of gate voltage is observed in the thinner crystallite devices. The temperature-dependent resistivity measurements show more boundary scattering contribution in the thinner graphite samples.