Publication | Closed Access
Electrical modeling and characterization of 3-D vias
64
Citations
6
References
2008
Year
Unknown Venue
Device Modeling3D Ic ArchitectureElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)Transmission LineElectrical ModelingPlane LocationOverall Loop InductanceComputational ElectromagneticsElectronic PackagingMicroelectronicsThird ShieldInterconnect (Integrated Circuits)Electrical InsulationElectromagnetic Compatibility
Electrical characterization of the resistance, capacitance, and inductance of inter-plane 3-D vias is presented in this paper. Both capacitive and inductive coupling between multiple 3-D vias is described as a function of the separation distance and plane location. The effects of placing a third shield via between two signal vias is investigated as a means to limit the capacitive coupling. The location of the return path is examined to determine the best placement of a 3-D via to reduce the overall loop inductance. Based on the extracted resistance, capacitance, and inductance, the L/R time constant is shown to be much larger than the RC time constant, demonstrating that the 3-D via structure investigated in this paper is inductively limited rather than capacitively limited.
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