Microwave Semiconductor Switching Techniques

Abstract

This paper describes new microwave techniques employing the properties of N-type germanium diode switches. For applications requiring very high isolations, multiple switches are added in tandem. With proper spacing, they form antiresonant cavity circuits. In this case the isolations and insertion losses in db are directly additive. A switch is described which is normally ON and is pulsed OFF. Finally, details are given of a switch in a hybrid-tee configuration in which switching isolations of 50 db are obtained with an insertion loss of 0.7 db.