Publication | Closed Access
The effect of nitrogen pressure on the two-step method deposition of GaN films
19
Citations
10
References
2006
Year
Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineeringTwo-step Method DepositionSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorGan FilmsNitrogen Pressure
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