Multikilovolt picosecond optoelectronic switching in CdS<inf>0.5</inf>Se<inf>0.5</inf>

Abstract

Multikilovolt optoelectronic switching is reported in CdS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Se <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> . Two schemes are proposed for this purpose and their relative merits are discussed. CdS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Se <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> can hold a dc bias of a little more than 2 kV. Limitations of the device under high dc bias are explained in terms of combined effect of carrier injection and thermal runaway.