Ion beam induced composition changes during auger sputter profiling of thin Al films on InP

Abstract

Abstract Auger sputter profiles of thin AI films on InP are presented and shown to be susceptible to an unusual type of ion beam induced interfacial distortion. It is found that recoil implantation and atomic mixing produce a differential broadening of the In and P at the interface which can seriously affect the integrity of the Auger profile. Energy shifts in the AI Auger peak indicate that this distortion is associated with AIP formation to a depth dictated by the ion beam energy and species. Experimental requirements for the reduction of interfacial distortion are discussed. We also consider the influence of the ion beam on the topography and morphology of the InP surface in relation to interfacial distortion.