A W-band monolithic amplifier

Abstract

Monolithic amplifiers at 90 GHz have been fabricated using 75- mu m GaAs MESFET and pseudomorphic high-electron mobility transistor (PHEMT) devices. The below 0.2- mu m gate-length PHEMT devices have demonstrated an F/sub t/ of 100 GHz and an F/sub max/ of 200 GHz. Monolithic MESFET and PHEMT single-stage amplifiers have achieved 3.5-dB and 7-dB gain, respectively, at 90 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>