A Novel Low-Temperature Synthetic Route to Crystalline Si3N4

Abstract

A low-temperature preparation of crystalline Si3N4 is described that avoids the temperatures above 1200 °C necessary in other methods. Si3N4s chemical stability, high-temperature strength, and excellent creep resistance make it a promising material for high-temperature engineering applications. The Figure shows a transmission electron microscopy image of a Si3N4 sample.