InSb nanowire field-effect transistors — Electrical characterization and material analysis

Abstract

In summary we have demonstrated for the first time the fabrication and characterization of InSb NWFETs. Clear evidence of a small band gap semiconductor with device characteristics consistent with an E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> -value of around 160 meV to 180 meV have been provided using a simple yet novel data analysis. Our data can consistently be explained assuming two distinct regions in the device with one being a gate-independent shunt resistance. The presented device characteristics are a starting point to develop an understanding of InSb NWFETs that can lead to new device architectures such as tunneling field-effect transistors, highly linear amplifiers, and other high-speed, low-power applications.