Epitaxial growth of the topological insulator Bi2Se3 on Si(111): Growth mode, lattice parameter, and strain state

Abstract

Using spot profile analysis low energy electron diffraction, we studied the growth mode and strain state of ultra-thin epitaxial Bi2Se3(111) films grown by molecular beam epitaxy on Si(111). The first layer grows as complete quintuple layer and covers the Si substrate before the next layer nucleates. Its lateral lattice parameter is increased by 1% compared with the value of a‖ = 4.136 Å for a 6-nm-thick film. With increasing film thickness, a continuous change of the lattice parameter is observed to an asymptotic value, which is explained by a van der Waals-like bonding between the Bi2Se3 film and the Si substrate.