Publication | Open Access
Broadening of submonolayer CdSe sheets in CdSe/ZnSe superlattices studied by x-ray diffraction
53
Citations
12
References
1999
Year
EngineeringCrystal Growth TechnologySemiconductor NanostructuresSemiconductorsIi-vi SemiconductorCdse/znse Submonolayer SuperlatticesSubmonolayer Cdse SheetsVertical Cdse DistributionMolecular Beam EpitaxyEpitaxial GrowthMaterials SciencePhysicsCrystalline DefectsCdse/znse SuperlatticesNanocrystalline MaterialCrystallographyCdse Distribution ProfileSurface ScienceApplied PhysicsCondensed Matter PhysicsX-ray Diffraction
We present x-ray diffraction studies of a CdSe distribution profile along the growth direction in CdSe/ZnSe submonolayer superlattices (SLs) grown by molecular beam epitaxy. The performed theoretical simulations show that the shape of both (004)- and (002)-reflection rocking curves is very sensitive to the vertical CdSe distribution around the intended deposition yplanes. In particular, broadening of the CdSe submonolayer insertions results in a decrease in SL (±1) and (±2) satellite intensities. Comparison of the simulations and experimental data allows us to conclude that CdSe sheets in the as-grown SL samples are asymmetrically broaden up to 5 monolayers.
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