Substrate Bias Effect on Diamond Deposition by DC Plasma Jet

Abstract

By applying positive bias voltage to a substrate in diamond CVD by a dc plasma jet of the Ar–H 2 –CH 4 system, the deposition rate increased more than twofold, and the maximum rate of 15 µm/min was obtained. The deposition area also increased but the uniformity of film thickness did not improve. Applying the bias voltage to a ring electrode around the substate increased the deposition rate by nearly the same amount without increasing the substrate temperature.