Preparation of CuInSe₂ Thin Films on Mo-Coated Glass Substrates by Pulse-Plated Electrodeposition

Abstract

CuInSe 2 thin films are prepared on Mo-coated glass substrates by pulse-plated electrodeposition from an aqueous solution including CuCl 2 , InCl 3 and SeO 2 . Film deposition with a stoichiometric composition and a smooth surface has been achieved by the control of the applied pulses with a duty cycle θ of 33% and a cathode potential during on-time of -0.7 V vs the saturated calomel electrode (SCE). The deposited films are annealed in nitrogen gas to be crystallized. The optimum annealing conditions have been determined using X-ray diffraction and Raman spectra measurement as: annealing temperature of 400°C, and annealing duration of 90 min.