Double-Scattering Mechanism to Account for the Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>K</mml:mi></mml:math>-X-Ray Yields Observed during Argon-Ion Bombardment of Silicon

Abstract

Si $K$ x rays are observed when solid Si is bombarded by 160-260-keV ${\mathrm{Ar}}^{++}$ ions. The production of such x rays is interpreted in terms of the Fano-Lichten model, and a double-scattering mechanism whereby Si $K$ vacancies are produced by electron promotion to an Ar ${L}_{2,3}$ vacancy formed in a prior collision.