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Epitaxial PbTiO3 thin films grown by organometallic chemical vapor deposition
96
Citations
7
References
1991
Year
Materials EngineeringOxide HeterostructuresMaterials ScienceMaterial AnalysisEngineeringSrtio3 SubstratesCrystalline DefectsOxide ElectronicsSurface ScienceApplied PhysicsEpitaxial Pbtio3 LayersChemistryThin FilmsMolecular Beam EpitaxyEpitaxial GrowthChemical Vapor DepositionThin Film ProcessingHrem Twinning
Epitaxial PbTiO3 layers have been grown on (001)SrTiO3 substrates by organometallic chemical vapor deposition using the precursors titanium-iso-propoxide and tetra-ethyl-lead. The growth temperature for these films was around 700 °C. The epitaxial nature of c-axis-oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry, x-ray diffraction, including pole figure analysis, and high-resolution electron microscopy (HREM). With HREM twinning has been observed.
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