Comparative analysis of growth rate reductions on shadow masked substrates

Abstract

The growth on shadow masked substrates by atmospheric pressure metalorganic vapor phase epitaxy is investigated. An analytical description based on simple concepts for a complex geometry shows good agreement with the experimental results and enables the determination of quantum well thickness variations in optical waveguide structures. The growth rate reduction (or: ratio of growth rates) r(u) in the middle of the channel increases as the width-to-height ratio of the mask opening is increased.