Publication | Open Access
High-speed photodiodes for InP-based photonic integrated circuits
57
Citations
12
References
2012
Year
Photonic DevicePhotonicsElectrical EngineeringMillimeter Wave TechnologyEngineeringButt-joint Monolithic IntegrationIntegrated PhotonicsDevice IntegrationHigh-speed PhotodiodesApplied PhysicsIntegrated CircuitsPhotonic Integrated CircuitUni-traveling Carrier PhotodiodesMicroelectronicsMicrowave PhotonicsOptoelectronicsMonolithic Integration
We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).
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