Deep-level defect characteristics in pentacene organic thin films

Abstract

Organic thin-film transistors using the pentacene as an active electronic material have shown the mobility of 0.8 cm2/V s and the grains larger than 1 μm. To study the characteristics of electronic charge concentrations and the interface traps of the pentacene thin films, the capacitance properties were measured in the metal/insulator/organic semiconductor structure device by employing the capacitance–voltage and deep-level transient spectroscopy (DLTS) measurements. Based on the DLTS measurements, the concentrations and the energy levels of hole and electron traps in the obtained pentacene films were formed to be approximately 4.2×1015 cm−3 at Ev+0.24 eV, 9.6×1014 cm−3 at Ev+1.08 eV, 6.5×1015 cm−3 at Ev+0.31 eV and 2.6×1014 cm−3 at Ec−0.69 eV.