Stoichiometry effects in angle -resolved photoemission and transport studies of Ti_1+xS₂

Abstract

The authors report measurements of angle-resolved photoemission and of transport properties for the same samples of nearly stoichiometric TiS2, and of Ti1.05S2. It is shown that the carrier densities derived from the two techniques are consistent, and the geometries of the Fermi surfaces are mapped out. The data also show that there is an indirect gap of 0.3+or-0.1 eV between the S p and Ti d bands, for both materials.