Effects of thermal annealing on the band gap of GaInAsSb

Abstract

In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500-nm-thick GaInAsSb bulk layer, a blueshift of 83meV was found after annealing for 2h at 520°C, whereas for MQW structures the maximum shift was 61meV.