Lasing characteristics of improved GaInAsP/InP surface emitting injection lasers

Abstract

The letter presents a surface-emitting GaInAsP/InP injection laser with 7 μm cavity length operating at 1.30 μm of wavelength. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64 Å/degree). The near-field diameter was 9 μm and the far-field angle (FWHM) was 9°. The polarisation was linear.