Journal of Applied Physics · 2006 · 55 citations · 26 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsDopingMetal SulfidesPhotovoltaic MaterialsSolar Cell MaterialsSolar CellsThin Film Electrical PropertiesBand GapDoping In Thin FilmsElectrical Conductivity Of SulfidesIndium Tin Oxide Thin FilmsMetal Sulfide Thin FilmsMetallic Thin FilmsSemiconductor CharacterizationSemiconductor Doping
The effect of doping spray pyrolyzed thin films of In2S3 with silver is discussed. It was observed that silver diffused into In2S3 films in as deposited condition itself. Depth profile using x-ray photoelectron spectroscopy clearly showed diffusion of silver into In2S3 layer without any annealing. X-ray analysis revealed significant enhancement in crystallinity and grain size up to an optimum percentage of doping concentration. This optimum value showed dependence on thickness and atomic ratio of indium and sulfur in the film. Band gap decreased up to the optimum value of doping and thereafter it increased. Electrical studies showed a drastic decrease in resistivity from 1.2×103to0.06Ωcm due to doping. A sample having optimum doping was found to be more photosensitive and low resistive when compared with a pristine sample. Improvement in crystallinity, conductivity, and photosensitivity due to doping of spray pyrolyzed In2S3 films with Ag helped to attain efficiency of 9.5% for Ag∕In2S3∕CuInS2∕ITO (indium tin oxide) solar cell.
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