Domain Wall Motion in <scp>A</scp> and <scp>B</scp> Site Donor‐Doped <scp> <scp>Pb</scp> </scp> ( <scp> <scp>Zr</scp> </scp> _0.52 <scp> <scp>Ti</scp> </scp> _0.48 ) <scp> <scp>O</scp> </scp> ₃ Films

Abstract

Donor‐doped PbZr 0.52 Ti 0.48 O 3 ( PZT ) films were utilized to study the effect of dopants on the mobility of ferroelectric domain walls. For chemical solution deposited PZT films 2 μm in thickness, doped with 1%–4% Nb or La , the low field dielectric permittivity remained between 1100 and 1300. With increasing Nb concentration, both the reversible and irreversible Rayleigh constants increased from ɛ init and α ′ of 1150 and 39 cm/kV, respectively, for undoped PZT films to 1360 and 43 cm/kV for films doped with 2 mol% Nb . La doping increased the irreversible Rayleigh constant but did not strongly affect the reversible Rayleigh parameter. These observations are consistent with softening of the dielectric and electromechanical response with donor doping.