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SbSI Films for Ferroelectric Memory Applications
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2002
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Materials ScienceMaterials EngineeringElectrical EngineeringMultiferroicsFerroelectric Antimony SulphoiodideEngineeringEpitaxial GrowthFerroelectric ApplicationNanoelectronicsApplied PhysicsFerroelectric MaterialsSbsi FilmsThin FilmsMicroelectronicsPlatinized Silicon SubstratesPyroelectricity
Films of ferroelectric antimony sulphoiodide (SbSI) were grown on platinized silicon substrates by pulsed laser deposition (PLD). The films were grown at room temperature and later annealed at 200-250 C in air for crystallinity. The Curie temperature (T C ) of these films was 17-21 C, whereas the peak dielectric constant was up to 5000. These films showed nonzero remnant polarization above T C up to a temperature of 40 C and a low leakage current density of around 10 m 6 A/cm 2 at 2V. SbSI films were integrated with colossal magnetoresistive La 0.67 Ca 0.33 MnO 3 (LCMO) thin film, which acts as a p-type semiconductor. The LCMO-SbSI heterostructures, with SbSI as a ferroelectric gate, showed a channel modulation of about 10%.