Enhancement of 1.54 μm photoluminescence observed in Al-doped β-FeSi2

Abstract

We present photoluminescence (PL) properties of impurity (Al, Mn, Co)-doped β-FeSi2 produced by ion-beam synthesis. The β-Fe(Si1−xAlx)2 sample showed an increase of both the PL intensity and activation energy (Ea) for a nonradiative recombination path. On the contrary, the β-(Fe1−xMnx)Si2 and the β-(Fe1−xCox)Si2 samples reduced the PL intensity and Ea. We found that the doping of Al atoms occupying the Si sites in β-FeSi2 is effective to enhance the 1.54 μm photoluminescence.