A CMOS-Compatible, Low-Loss, and Low-Crosstalk Silicon Waveguide Crossing

Abstract

We demonstrated a waveguide crossing for submicron silicon waveguides with average insertion loss of 0.18±0.03 dB and crosstalk of -41±2 dB, uniform across an 8-inch wafer. The device was fabricated in a CMOS-compatible process using 248 nm lithography, with only one patterning step.