Publication | Closed Access
High-resolution structural study of Bi on Si(001)
27
Citations
4
References
1995
Year
EngineeringChemistrySilicon On InsulatorSiliceneX-ray Standing-wave MeasurementsMaterials EngineeringHigh-resolution Structural StudyPhysicsPhysical ChemistryBi-dimer OrientationSemiconductor Device FabricationCrystallographySurface CharacterizationSurface ChemistryNatural SciencesSurface AnalysisSurface ScienceApplied PhysicsCondensed Matter PhysicsBi Surface
X-ray standing-wave measurements, along with first-principles local-density molecular-cluster calculations, have determined the Bi-dimer orientation, location, and bond length for the Si(001)-(1\ifmmode\times\else\texttimes\fi{}2):Bi surface. The results for Bi directly scale with the covalent radii and with adsorption characteristics of other group-V elements (As and Sb) on Si(001).
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