Photo-induced absorption change in some Se-based glass alloy systems

Abstract

The random-network model for amorphous alloys proposed by White has been developed for some Se-based amorphous semiconductors (Ge-Se, As-Se, and Se-As-Ge) annealed or irradiated with light. The model suggests that the photobleaching and the photodarkening in these systems may be due to change in the number of bonds. Also, the photobleaching region and the photodarkening region are theoretically predicted for the Se-As-Ge glass-forming ternary system.