Control of threshold voltage in organic thin-film transistors by modifying gate electrode surface with MoOX aqueous solution and inverter circuit applications

Abstract

We controlled the threshold voltage of organic thin-film transistors (TFTs) by treating only the gate electrode surface with a MoOX aqueous solution and used them to build inverter circuits. The threshold voltage was changed by varying the concentration of the MoOX aqueous solution. A strong correlation between the work function of the gate electrode and the threshold voltage was observed. The threshold voltage of one of the two organic TFT devices in the inverter circuit was selectively changed by +2.3 V by reducing the concentration of the MoOx solution. We controlled the switching voltage of p-type organic inverter circuits and obtained excellent inverter characteristics. These results indicate that using a MoOx aqueous solution to control the threshold voltage is very useful for integrated circuits applications.