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Epitaxial growth of SrTiO3 thin films by metalorganic chemical vapor deposition
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1995
Year
Materials EngineeringMaterials ScienceOxide HeterostructuresMaterial AnalysisEngineeringSrtio3 Thin FilmsOxide ElectronicsSurface ScienceApplied PhysicsFluorine ContaminationX-ray DiffractionSrtio3 FilmsThin Film Process TechnologyThin FilmsMolecular Beam EpitaxyEpitaxial GrowthChemical Vapor DepositionThin Film Processing
Epitaxial SrTiO3 thin films were prepared using low pressure metalorganic chemical vapor deposition. The volatile metalorganic precursors employed were Sr(hexafluoroacetyl acetonate)2⋅tetraglyme and titanium tetraisopropoxide. Single-phase, epitaxial films were deposited on (100)LaAlO3 at a temperature of 810 °C. In-plane epitaxy was verified using x-ray phi scan analysis. The SrTiO3 films exhibit a significant tetragonal distortion with c/a=1.010(±1.6×10−4) at room temperature. No evidence of fluorine contamination is noted by x-ray diffraction or by Auger electron spectroscopy measurements.