Applied Physics Letters · 2013 · 13 citations · 20 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsElectrochemistryElectronic MaterialsElectrical Properties Of CeramicsElectrode KineticsElectrode MaterialsFerroelectric MaterialsPiezoelectric CeramicsPiezoelectric MaterialsBiaxial StrainConductivityFerroelectric CapacitorsFerroelectric PropertiesFerroelectricityManganese OxidesPiezoelectric PropertiesSwitching Kinetics
The influence of the bottom electrode's resistance on ferroelectric switching kinetics has been investigated in BiFeO3/La0.8Ca0.2MnO3 capacitors with Pt top contacts. Reversible biaxial strain applied using a piezoelectric substrate is employed to control the resistance of manganite bottom electrode. We found strong dependence of both the switching time and the coercive fields on the electrode's resistance. The reason is attributed to the splitting of the applied voltage between the ferroelectric film and the electrode, which becomes more severe with increasing switching speed. This highlights a crucial limitation for fast switching using lower-conductivity electrodes and inspires the external control of switching kinetics via the electrodes' conductivity.
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Epitaxial BiFeO <sub>3</sub> Multiferroic Thin Film Heterostructures
Junling Wang, Jeffrey B. Neaton, Haimei Zheng et al. · Science · 2003 · 6.2K citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
A Resistive Memory in Semiconducting BiFeO<sub>3</sub> Thin‐Film Capacitors
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Nanoscale Control of Domain Architectures in BiFeO<sub>3</sub> Thin Films
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Natural Sciences, Materials Engineering, Materials Science +17