Long-wavelength high-efficiency low-threshold InGaAsP/InP MQW lasers with compressive strain

Abstract

Broad-area MQW laser diodes using compressively strained (1.3%) InGaAsP wells are shown to have low threshold current density (=460A cm−2) at λ = 1.75 μm. Ridge waveguide lasers fabricated from the same material show low threshold currents, typically 20mA with a differential efficiency of 23% per facet. These results constitute the best device performance to date for the InGaAsP/InP system in the 1.6–2.2μm-wavelength region.